ald장비/ald진공장비/ald_GEMSTAR-8™ Benchtop ALD_ARRADIANCE_나노큐
Continuing trends in technology-driven industries are driving towards increased performance, miniaturization, lower power consumption, lower production costs, and an environmentally friendly production environment.
Founded in 2003, Arradiance combines unique talents in material science, charged particle physics, equipment design, modeling and simulation, vacuum technology, and metrology.
With a concentration in charged particle detection and amplification, Arradiance is the first to develop and demonstrate the capability of producing high gain, low noise micro channel amplifiers. Using our proprietary Atomic Layer Deposition (ALD) materials and equipment, Arradiance offers a new approach to electron amplification devices replacing the legacy traditional lead-glass/hydrogen firing process developed in 1960’s currently used for all state-of-the-art MCP applications.
With adoption in the near future of Arradiance process technologies, coupled with the recent advancements in vacuum MEMS technology, it is now foreseeable that high gain, low noise, low power semi-conductor process devices can be produced with far greater performance than traditional avalanche diode technologies.
GEMSTAR-8™ Benchtop ALD
GEMSTARTM Meeting the challenge of high aspect ratio deposition over a broad range of substrates in a small package
Economical systems engineered for heavyweight tasks and lightweight budgets
GEMSTARTM Benchtop ALD
The product line deposits low temperature conformal metal, semiconductor and insulating films on planar and high aspect ratio (HAR) structures. They are designed for uniform conformal growth of films from precursors that have a CVD growth component.
The uniformity of thin films can determine whether a process or device works, the system is designed to provide the user with the most uniform films possible even in challenging HAR through-hole applications.
Some key features of the system include:
- Up to 200mm Ø substrates and 3D objects 25mm tall. Customizable end effector allows clean, simple and repeatable loading of substrates
- Up to 300⁰C dual zone ALD process reactor with substrate thermal control to ± 1°C
- 8 ALD precursor ports with up to four external ALD oxidizer gases (2 Standard)
- Single Inert gas vapor pressure assist for ultra-low vapor pressure precursors.
- Up to 150⁰C dual zone gas manifolds with distributed gas reactor input insures uniform gas distribution over the entire substrate
- Up to 140⁰C dual zone ALD insulated bottle jackets
- Metal seal gas handling with dual differentially pumped o-ring door seals ensures minimal process contamination at high temperatures
- System pressure monitoring
- MFC controlled user selectable purge gas input
- CF 2.75 flange reactor interface for easy attachment of optional QCM or mass spectrometer
GEMSTAR-8™ Benchtop ALD
ald장비/ald진공장비/ald_GEMSTAR-8™ Benchtop ALD_ARRADIANCE_나노큐
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